3LN01C
mm
Outline Drawing
3LN01C-TB-E, 3LN01C-TB-H
Mass (g) Unit
0.013
* For reference
Land Pattern Example
0.8
Unit: mm
0.95
0.95
No.6260-5/6
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相关代理商/技术参数
3LN01M 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LN01M_06 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
3LN01M-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
3LN01MG-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
3LN01ML-AL3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
3LN01M-TL-E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
3LN01M-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
3LN01N 制造商:未知厂家 制造商全称:未知厂家 功能描述: